Michael Beregovsky

Date: From-To Institute Degree Area of specialization
1968 – 1974 Moscow Technical University (State Steel & Alloys Institute) M. Sc. Solid State Physics
1992 – 1996 Technion, Israel Institute of Technology Ph. D. Materials Science


PREVIOUS EMPLOYMENT – begin with present position (do not include students’tutoring, memberships in scientific associations or guest lectures)
Date: From-To Institute Title Research area
2012 – current Department of Materials and  Science Engineering, Technion, Israel Institute of Technology Senior Engineer Kinetics of formation of metallic nanotubes. Mechanical properties of submicron particles.
2009 – 2012 Center of Nanotechnology, Department of Electrical Engineering, Technion, Israel Institute of Technology Research Fellow Research and Development of microelectronic devices based on silicon nanowires and carbon nanotubes.
2008 – 2009 Xenemetrix Ltd., Migdal HaEmek, Israel R&D Group Manager Development of advanced software for XRF analyzer; Metrology.
2001 – 2008 Semi Conductor Devices,P.O.Box 2250/99, Haifa, Israel


Senior Scientist Development of Laser Devices Technology, Failure analysis of Laser Devices
1999 – 2001 Tower Semiconductor Ltd.,Migdal Haemek, Israel Reliability Engineer Electrical testing of electronic devices and statistical analysis of production quality
1996 – 1999 Sizary, Material Purification Ltd., Migdal Tefen 24959, Israel Physicist Protection of  silicon wafers from metallic contamination
1980 – 1989 Institute of High Temperatures, Russian Academy of Sciences, Moscow Research Fellow Magnetic measurements and physical-chemical characterization of superconductors.
1976 – 1980 Scientific Industrial Center “Molnija” Ministry of Aircraft Industry, Moscow(Space Shuttle project) Principle Engineer Physical and chemical  analysis of thermal protecting materials.
1974 – 1976 Institute of Devices, Scientific Industrial Union “AGROPRIBOR”, Moscow Engineer Mechanical properties of Al-based alloys obtained by vacuum melting


  1. Ya. Beregovsky, Ya. A. Korolev, T. K. Runova, M. P. Orlova, “A Metallographic Investigation of Alloys of System Nb-Ge and Nb-Ge-Si”, Phys. Met. Metall., 57, (1984), 102.
  2. Beregovsky, I. Levin, A. Berner, and M. Eizenberg; V. Demuth, and H.P. Strunk, “Effect of Impurities on Initial Stages of Phase Formation for the System of Ti Deposited on (001) Si-Ge Layers”, Thin Solid Films, 338, (1999), 110.
  3. Beregovsky, A. Klyuch, Y. Raskin, Y. Zinman, Y. Shacham-Diamand, and B. E. Deal, “Protection of Si Wafers From Alkali Contamination During High Temperature Processing Using Electric Field”, Journal of The Electrochemical Society, Volume 147 (9), (2000), ,3892-3898.
  4. Katsman, Y. Yaish, E. Rabkin, M. Beregovsky, “Surface diffusion Controlled Formation of Nickel Silicides in Silicon Nanowires”, J. Electron. Mater., 39, (2010), 365.
  5. E. Yaish, A. Katsman, G. M. Cohen, M. Beregovsky, “Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth”, J. Appl. Phys., 109, (2011), 094303.
  6. Katsman, Y. Yaish, M. Beregovsky, “From Contact to Diffusion Controlled Growth of Nickel Silicides in Silicon Nanowires”, Defect and Diffusion Forum, Vols. 323-325, (2012), 427-432.
  7. Beregovsky, A. Katsman, E. M. Hajaj, Y. E. Yaish, “Diffusion formation of nickel silicide contacts in SiNWs”, Solid-State Electronics, 80, (2013), 110-117.
  8. Katsman, M. Beregovsky, Y. E. Yaish, “Evolution of Nickel Silicide Intrusions in Silicon Nanowires during Thermal Cycling”, J. Appl. Phys., 113, 084305 (2013); doi: 10.1063/1.4792670.
  9. Katsman, M. Beregovsky, Y. E. Yaish, “Formation and Evolution of nickel silicides in silicon nanowires”, IEEE Transactions on Electron Devices, 61, (2014), 3363-3371.
  10. S. Baylan, G. Richter, M. Beregovsky, D. Amram, E. Rabkin, “The kinetics of hollowing of Ag–Au core–shell nanowhiskers controlled by short-circuit diffusion”, Acta Mater (2014),