Picture1

Chemical structures, device schematic and optical images of (a) semiconducting polymer DPP-T-TT, (b) PEG additive, (c) bottom-gate top-contact OFET, and (d) optical image of a substrate containing 20 devices with different channel lengths, L = 30, 40, 50, and 80 μm; and W = 1000 μm. Inset: microscopic image of a single OFET device (W/L = 1000/30).

Chemical structures, device schematic and optical images of (a) semiconducting polymer DPP-T-TT, (b) PEG additive, (c) bottom-gate top-contact OFET, and (d) optical image of a substrate containing 20 devices with different channel lengths, L = 30, 40, 50, and 80 μm; and W = 1000 μm. Inset: microscopic image of a single OFET device (W/L = 1000/30).